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authorMario Six <mario.six@gdsys.cc>2018-08-06 10:23:30 +0200
committerSimon Glass <sjg@chromium.org>2018-09-18 00:01:18 -0600
commite40615565d68465284b3c6a5fc4147f662824a88 (patch)
tree8654ebc0d143eed7c33e69db4b2a584e44359570 /Documentation/devicetree/bindings
parent0f1caa98807901a2d94cdda891d8380c4dc69063 (diff)
downloadu-boot-e40615565d68465284b3c6a5fc4147f662824a88.tar.gz
ram: Add driver for MPC83xx
Add a RAM driver for the MPC83xx architecture. Reviewed-by: Simon Glass <sjg@chromium.org> Signed-off-by: Mario Six <mario.six@gdsys.cc>
Diffstat (limited to 'Documentation/devicetree/bindings')
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+MPC83xx RAM controller
+
+This driver supplies support for the embedded RAM controller on MCP83xx-series
+SoCs.
+
+For static configuration mode, each controller node should have child nodes
+describing the actual RAM modules installed.
+
+Controller node
+===============
+
+Required properties:
+- compatible: Must be "fsl,mpc83xx-mem-controller"
+- reg: The address of the RAM controller's register space
+- #address-cells: Must be 2
+- #size-cells: Must be 1
+- driver_software_override: DDR driver software override is enabled (1) or
+ disabled (0)
+- p_impedance_override: DDR driver software p-impedance override; possible
+ values:
+ * DSO_P_IMPEDANCE_HIGHEST_Z
+ * DSO_P_IMPEDANCE_MUCH_HIGHER_Z
+ * DSO_P_IMPEDANCE_HIGHER_Z
+ * DSO_P_IMPEDANCE_NOMINAL
+ * DSO_P_IMPEDANCE_LOWER_Z
+- n_impedance_override: DDR driver software n-impedance override; possible
+ values:
+ * DSO_N_IMPEDANCE_HIGHEST_Z
+ * DSO_N_IMPEDANCE_MUCH_HIGHER_Z
+ * DSO_N_IMPEDANCE_HIGHER_Z
+ * DSO_N_IMPEDANCE_NOMINAL
+ * DSO_N_IMPEDANCE_LOWER_Z
+- odt_termination_value: ODT termination value for I/Os; possible values:
+ * ODT_TERMINATION_75_OHM
+ * ODT_TERMINATION_150_OHM
+- ddr_type: Selects voltage level for DDR pads; possible
+ values:
+ * DDR_TYPE_DDR2_1_8_VOLT
+ * DDR_TYPE_DDR1_2_5_VOLT
+- mvref_sel: Determine where MVREF_SEL signal is generated;
+ possible values:
+ * MVREF_SEL_EXTERNAL
+ * MVREF_SEL_INTERNAL_GVDD
+- m_odr: Disable memory transaction reordering; possible
+ values:
+ * M_ODR_ENABLE
+ * M_ODR_DISABLE
+- clock_adjust: Clock adjust; possible values:
+ * CLOCK_ADJUST_025
+ * CLOCK_ADJUST_05
+ * CLOCK_ADJUST_075
+ * CLOCK_ADJUST_1
+- ext_refresh_rec: Extended refresh recovery time; possible values:
+ 0, 16, 32, 48, 64, 80, 96, 112
+- read_to_write: Read-to-write turnaround; possible values:
+ 0, 1, 2, 3
+- write_to_read: Write-to-read turnaround; possible values:
+ 0, 1, 2, 3
+- read_to_read: Read-to-read turnaround; possible values:
+ 0, 1, 2, 3
+- write_to_write: Write-to-write turnaround; possible values:
+ 0, 1, 2, 3
+- active_powerdown_exit: Active powerdown exit timing; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- precharge_powerdown_exit: Precharge powerdown exit timing; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- odt_powerdown_exit: ODT powerdown exit timing; possible values:
+ 0, 1, 2, 3, 4, 5, 6, 7, 8,
+ 9, 10, 11, 12, 13, 14, 15
+- mode_reg_set_cycle: Mode register set cycle time; possible values:
+ 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15
+- precharge_to_activate: Precharge-to-acitvate interval; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- activate_to_precharge: Activate to precharge interval; possible values:
+ 4, 5, 6, 7, 8, 9, 10, 11, 12,
+ 13, 14, 15, 16, 17, 18, 19
+- activate_to_readwrite: Activate to read/write interval for SDRAM;
+ possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- mcas_latency: MCAS latency from READ command; possible values:
+ * CASLAT_20
+ * CASLAT_25
+ * CASLAT_30
+ * CASLAT_35
+ * CASLAT_40
+ * CASLAT_45
+ * CASLAT_50
+ * CASLAT_55
+ * CASLAT_60
+ * CASLAT_65
+ * CASLAT_70
+ * CASLAT_75
+ * CASLAT_80
+- refresh_recovery: Refresh recovery time; possible values:
+ 8, 9, 10, 11, 12, 13, 14, 15,
+ 16, 17, 18, 19, 20, 21, 22, 23
+- last_data_to_precharge: Last data to precharge minimum interval; possible
+ values:
+ 1, 2, 3, 4, 5, 6, 7
+- activate_to_activate: Activate-to-activate interval; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- last_write_data_to_read: Last write data pair to read command issue
+ interval; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- additive_latency: Additive latency; possible values:
+ 0, 1, 2, 3, 4, 5
+- mcas_to_preamble_override: MCAS-to-preamble-override; possible values:
+ * READ_LAT
+ * READ_LAT_PLUS_1_4
+ * READ_LAT_PLUS_1_2
+ * READ_LAT_PLUS_3_4
+ * READ_LAT_PLUS_1
+ * READ_LAT_PLUS_5_4
+ * READ_LAT_PLUS_3_2
+ * READ_LAT_PLUS_7_4
+ * READ_LAT_PLUS_2
+ * READ_LAT_PLUS_9_4
+ * READ_LAT_PLUS_5_2
+ * READ_LAT_PLUS_11_4
+ * READ_LAT_PLUS_3
+ * READ_LAT_PLUS_13_4
+ * READ_LAT_PLUS_7_2
+ * READ_LAT_PLUS_15_4
+ * READ_LAT_PLUS_4
+ * READ_LAT_PLUS_17_4
+ * READ_LAT_PLUS_9_2
+ * READ_LAT_PLUS_19_4
+- write_latency: Write latency; possible values:
+ 1, 2, 3, 4, 5, 6, 7
+- read_to_precharge: Read to precharge; possible values:
+ 1, 2, 3, 4
+- write_cmd_to_write_data: Write command to write data strobe timing
+ adjustment; possible values:
+ * CLOCK_DELAY_0
+ * CLOCK_DELAY_1_4
+ * CLOCK_DELAY_1_2
+ * CLOCK_DELAY_3_4
+ * CLOCK_DELAY_1
+ * CLOCK_DELAY_5_4
+ * CLOCK_DELAY_3_2
+- minimum_cke_pulse_width: Minimum CKE pulse width; possible values:
+ 1, 2, 3, 4
+- four_activates_window: Window for four activates; possible values:
+ 1, 2, 3, 4 8, 9, 10, 11, 12,
+ 13, 14, 15, 16, 17, 18, 19
+- self_refresh: Self refresh (during sleep); possible values:
+ * SREN_DISABLE
+ * SREN_ENABLE
+- ecc: Support for ECC; possible values:
+ * ECC_DISABLE
+ * ECC_ENABLE
+- registered_dram: Support for registered DRAM; possible values:
+ * RD_DISABLE
+ * RD_ENABLE
+- sdram_type: Type of SDRAM device to be used; possible values:
+ * TYPE_DDR1
+ * TYPE_DDR2
+- dynamic_power_management: Dynamic power management mode; possible values:
+ * DYN_PWR_DISABLE
+ * DYN_PWR_ENABLE
+- databus_width: DRAM data bus width; possible values
+ * DATA_BUS_WIDTH_16
+ * DATA_BUS_WIDTH_32
+- nc_auto_precharge: Non-concurrent auto-precharge; possible values:
+ * NCAP_DISABLE
+ * NCAP_ENABLE
+- timing_2t: 2T timing; possible values:
+ * TIMING_1T
+ * TIMING_2T
+- bank_interleaving_ctrl: Bank (chip select) interleaving control; possible
+ values:
+ * INTERLEAVE_NONE
+ * INTERLEAVE_1_AND_2
+- precharge_bit_8: Precharge bin 8; possible values
+ * PRECHARGE_MA_10
+ * PRECHARGE_MA_8
+- half_strength: Global half-strength override; possible values:
+ * STRENGTH_FULL
+ * STRENGTH_HALF
+- bypass_initialization: Bypass initialization; possible values:
+ * INITIALIZATION_DONT_BYPASS
+ * INITIALIZATION_BYPASS
+- force_self_refresh: Force self refresh; possible values:
+ * MODE_NORMAL
+ * MODE_REFRESH
+- dll_reset: DLL reset; possible values:
+ * DLL_RESET_ENABLE
+ * DLL_RESET_DISABLE
+- dqs_config: DQS configuration; possible values:
+ * DQS_TRUE
+- odt_config: ODT configuration; possible values:
+ * ODT_ASSERT_NEVER
+ * ODT_ASSERT_WRITES
+ * ODT_ASSERT_READS
+ * ODT_ASSERT_ALWAYS
+- posted_refreshes: Number of posted refreshes
+ 1, 2, 3, 4, 5, 6, 7, 8
+- sdmode: Initial value loaded into the DDR SDRAM mode
+ register
+- esdmode: Initial value loaded into the DDR SDRAM extended
+ mode register
+- esdmode2: Initial value loaded into the DDR SDRAM extended
+ mode 2 register
+- esdmode3: Initial value loaded into the DDR SDRAM extended
+ mode 3 register
+- refresh_interval: Refresh interval; possible values:
+ 0 - 65535
+- precharge_interval: Precharge interval; possible values:
+ 0 - 16383
+
+RAM module node:
+================
+
+Required properties:
+- reg: A triple <cs addr size>, which consists of:
+ * cs - the chipselect used to drive this RAM module
+ * addr - the address where this RAM module's memory is map
+ to in the global memory space
+ * size - the size of the RAM module's memory in bytes
+- auto_precharge: Chip select auto-precharge; possible values:
+ * AUTO_PRECHARGE_ENABLE
+ * AUTO_PRECHARGE_DISABLE
+- odt_rd_cfg: ODT for reads configuration; possible values:
+ * ODT_RD_NEVER
+ * ODT_RD_ONLY_CURRENT
+ * ODT_RD_ONLY_OTHER_CS
+ * ODT_RD_ONLY_OTHER_DIMM
+ * ODT_RD_ALL
+- odt_wr_cfg: ODT for writes configuration; possible values:
+ * ODT_WR_NEVER
+ * ODT_WR_ONLY_CURRENT
+ * ODT_WR_ONLY_OTHER_CS
+ * ODT_WR_ONLY_OTHER_DIMM
+ * ODT_WR_ALL
+- bank_bits: Number of bank bits for SDRAM on chip select; possible
+ values:
+ 2, 3
+- row_bits: Number of row bits for SDRAM on chip select; possible values:
+ 12, 13, 14
+- col_bits: Number of column bits for SDRAM on chip select; possible
+ values:
+ 8, 9, 10, 11
+
+Example:
+
+memory@2000 {
+ #address-cells = <2>;
+ #size-cells = <1>;
+ compatible = "fsl,mpc83xx-mem-controller";
+ reg = <0x2000 0x1000>;
+ device_type = "memory";
+ u-boot,dm-pre-reloc;
+
+ driver_software_override = <DSO_ENABLE>;
+ p_impedance_override = <DSO_P_IMPEDANCE_NOMINAL>;
+ n_impedance_override = <DSO_N_IMPEDANCE_NOMINAL>;
+ odt_termination_value = <ODT_TERMINATION_150_OHM>;
+ ddr_type = <DDR_TYPE_DDR2_1_8_VOLT>;
+
+ clock_adjust = <CLOCK_ADJUST_05>;
+
+ read_to_write = <0>;
+ write_to_read = <0>;
+ read_to_read = <0>;
+ write_to_write = <0>;
+ active_powerdown_exit = <2>;
+ precharge_powerdown_exit = <6>;
+ odt_powerdown_exit = <8>;
+ mode_reg_set_cycle = <2>;
+
+ precharge_to_activate = <2>;
+ activate_to_precharge = <6>;
+ activate_to_readwrite = <2>;
+ mcas_latency = <CASLAT_40>;
+ refresh_recovery = <17>;
+ last_data_to_precharge = <2>;
+ activate_to_activate = <2>;
+ last_write_data_to_read = <2>;
+
+ additive_latency = <0>;
+ mcas_to_preamble_override = <READ_LAT_PLUS_1_2>;
+ write_latency = <3>;
+ read_to_precharge = <2>;
+ write_cmd_to_write_data = <CLOCK_DELAY_1_2>;
+ minimum_cke_pulse_width = <3>;
+ four_activates_window = <5>;
+
+ self_refresh = <SREN_ENABLE>;
+ sdram_type = <TYPE_DDR2>;
+ databus_width = <DATA_BUS_WIDTH_32>;
+
+ force_self_refresh = <MODE_NORMAL>;
+ dll_reset = <DLL_RESET_ENABLE>;
+ dqs_config = <DQS_TRUE>;
+ odt_config = <ODT_ASSERT_READS>;
+ posted_refreshes = <1>;
+
+ refresh_interval = <2084>;
+ precharge_interval = <256>;
+
+ sdmode = <0x0242>;
+ esdmode = <0x0440>;
+
+ ram@0 {
+ reg = <0x0 0x0 0x8000000>;
+ compatible = "nanya,nt5tu64m16hg";
+
+ odt_rd_cfg = <ODT_RD_NEVER>;
+ odt_wr_cfg = <ODT_WR_ONLY_CURRENT>;
+ bank_bits = <3>;
+ row_bits = <13>;
+ col_bits = <10>;
+ };
+};